Announcement
Keysight Technologies Inc (NYSE:KEYS) reported that its shares rose 3% on Tuesday, 30 June 2026, after unveiling a joint gallium nitride (GaN) monolithic microwave integrated circuit (MMIC) design workflow together with WIN Semiconductors Corp.
Workflow Details
The new workflow is designed to help GaN MMIC design houses achieve first‑pass tapeout success by linking on‑chip multi‑domain simulation, three‑dimensional layout with verification, and off‑chip MMIC evaluation board design into a single environment. It automates simulation, optimization, and verification steps required before submitting a design to a foundry, reducing the risk of a failed tapeout that can cause weeks of delay and a costly respin at another foundry.
Target Applications
The solution is aimed at companies developing GaN MMICs for 5G base stations, Wi‑Fi access points, satellite payloads, and defense radar systems, enabling engineers to design and optimise both on‑chip and off‑chip components together while ensuring performance meets specifications through test‑equipment verification.
Technical Components
WIN Semiconductors’ NP 120P GaN Process Design Kit (PDK) provides designers with access to process models and layout rules. These models are integrated within Keysight’s Advanced Design System (ADS) and RF Circuit Simulation Professional tools, automating the workflow to achieve first‑pass MMIC tapeout.
Market Outlook
The global GaN RF device market is projected to reach US$2.77 billion by 2031, indicating significant growth potential for the technology.
Commentary
Richard Kuo, Director of Design Service at WIN Semiconductors, stated: “We are delighted to collaborate with Keysight to deliver a customized LVS solution within the WIN ADS PDK. By combining Keysight’s ADS expertise with WIN’s robust PDK and advanced process technology, we provided a comprehensive verification solution that streamlined the customer’s design flow and accelerated the time‑to‑market for advanced RF products with greater confidence and reliability.”