Para Light Announces ThermaFlat™ SiC MOSFET Family
On August 5, 2026, Para Light Electronics issued a press release from New Delhi announcing the official launch of its ThermaFlat™ silicon‑carbide (SiC) MOSFET portfolio, comprising ThermaFlat™ I and ThermaFlat™ II. The products are built on the company’s Ultra‑Low RDS(on) Drift Technology, which the release describes as a breakthrough that mitigates the temperature‑dependent on‑resistance drift that traditionally limits silicon and SiC devices in high‑power applications.
In benchmark testing, the 650 V, 21 mΩ TO‑247 device demonstrated an RDS(on) change of only approximately 8 % as junction temperature varied from –25 °C to +125 °C, a performance the company says vastly outperforms conventional SiC temperature coefficients. A similar ultra‑low temperature coefficient is applied to the 1200 V ThermaFlat™ family, targeting mission‑critical conversion architectures.
ThermaFlat™ I offers 650 V and 1200 V options in industry‑standard packages, designed for compatibility with mainstream converter topologies and to accelerate development cycles. ThermaFlat™ II incorporates the same ultra‑low drift characteristics together with a high VGS(th) architecture that enhances noise immunity and prevents false turn‑on, allowing operation without a negative gate‑off voltage supply. This eliminates the need for additional gate‑driver components, reduces bill‑of‑materials cost and simplifies circuitry.
The company lists a broad set of target applications, including AI data‑center and server power supplies, battery‑back‑up (BBU) and uninterruptible power supply (UPS) systems, electric‑vehicle (EV) charging stations, grid‑connected energy‑storage systems (ESS), photovoltaic (PV) inverters, variable‑frequency drives (VFD), and industrial automation. Para Light notes that the portfolio will be expanded with additional voltage classes, current ratings and package configurations.
Para Light emphasizes three strategic strengths underpinning its entry into advanced power semiconductors: superior manufacturing quality achieved through high wafer yields, dedicated in‑house packaging and stringent process controls; lower total cost of ownership via vertical integration of device design, packaging and supply‑chain management; and uninterrupted global supply through strategic production planning, safety inventory frameworks and responsive logistics. The firm highlights its global footprint, with operations in Taiwan, China, the United States, India and Myanmar, leveraging decades of expertise from its LED‑industry manufacturing base.
Media and sales contacts for India are listed as Abhinav Jha (phone: +1‑519‑671‑0998, email: abhinav.jha@para‑india.com) and Sunil Kumar (phone: +91‑892‑047‑8061, email: bd1@para‑india.com). The release notes that it is distributed via PRNewswire under an arrangement with PTI, which assumes no editorial responsibility.