Key Development
RIR Power Electronics Limited has completed the erection and installation of state-of-the-art Silicon Carbide (SiC) Epitaxial Wafer Manufacturing Reactors at its SiC semiconductor facility in Bhubaneswar, Odisha. This marks a significant milestone in establishing India's first vertically integrated SiC semiconductor production facility.
Event Details
The installation was completed and the facility readiness was witnessed on September 16, 2026 by Shri Vishal Dev, Additional Chief Secretary, Government of Odisha, and senior officials.
Investment Details
The project represents part of the Company's planned ₹618 crore investment towards establishing a vertically integrated SiC semiconductor manufacturing ecosystem.
Current Status
The key equipment required for SiC epitaxial wafer manufacturing process has been installed. Essential power connections, utilities and other supporting infrastructure have been commissioned and are in place. Commercial production is expected to commence upon completion of remaining statutory and regulatory formalities.
Product Scope
The facility will manufacture India's first SiC Epitaxial wafers for domestic and global markets, progressing to advanced SiC-based power semiconductor devices including high-power MOSFETs, diodes and modules.
Technology Advantages
SiC semiconductor technology offers higher energy efficiency, improved power handling, reduced power losses, higher operating temperatures and enhanced switching performance compared with conventional silicon-based technologies.
Target Applications
The products will cater to electric mobility, renewable energy, energy storage, railways, aerospace, defence, data centers, industrial power electronics and automation sectors.
Strategic Alignment
The investment supports the "Make in India" and "Atmanirbhar Bharat" initiatives and aims to strengthen India's domestic semiconductor ecosystem. The facility follows a "Silicon Carbide to System" approach to semiconductor manufacturing.